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Stability of AlAs in AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures

 

作者: J. M. Dallesasse,   P. Gavrilovic,   N. Holonyak,   R. W. Kaliski,   D. W. Nam,   E. J. Vesely,   R. D. Burnham,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 56, issue 24  

页码: 2436-2438

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.102902

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Data are presented on the long‐term (≳8 yr) degradation of AlxGa1−xAs‐AlAs ‐GaAs quantum well heterostructure material because of the instability of underlying (internal) AlAs layers. Material containing thicker (>0.4 &mgr;m) AlAs ‘‘buried’’ layers (confining layers) is found to be much less stable than material containing thinner (≲200 A˚) AlAs layers. Hydrolysis of the AlAs layers because of cleaved edges and pinholes in the cap layers leads to the deterioration.

 

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