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Spin‐dependent phonon Raman scattering and electronic structure of CdCr2X4(X:S,Se)

 

作者: N. Koshizuka,   Y. Yokoyama,   T. Okuda,   T. Tsushima,  

 

期刊: Journal of Applied Physics  (AIP Available online 1978)
卷期: Volume 49, issue 3  

页码: 2183-2185

 

ISSN:0021-8979

 

年代: 1978

 

DOI:10.1063/1.324724

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Spin‐dependent (SD) phonon Raman scattering in ferromagnetic CdCr2X4is closely associated with the resonance effect. In order to clarify the correlation between the excitation energy dependence of the SD phenomenon and the electronic structure, detailed temperature dependences of absorption and Faraday rotation spectra were measured between 20 and 300 K for ’’red‐shifting (RS)’’ transitions in CdCr2S4∼1.9 eV) and CdCr2Se4(∼1.2 eV). We found that the RS absorption peaks consists of a pair of electronic transitions with the energy separation of about 0.07 eV at 20 K. It turned out that the SD scattering cross section for Raman active phonon modesT2gandA1gin CdCr2S4observed with red excitation light are caused by the resonance with the pair transitions. Magnetic circular polarization properties of Raman spectra for CdCr2S4were measured in the applied fields up to 45 kOe in the Faraday configuration. The polarization and field‐induced effects observed with Kr 647.1 nm excitation light support the idea of SD resonance scattering. SD effects for phonon modesT2gandA1gare also found with higher excitation energiesC1(2.4 eV; CdCr2S4, 2.0 eV;CdCr2Se4) andC2(2.3 eV;CdCr2Se4), respectively. The correlations between the SD phonon scattering and the electronic structures are discussed on the basis of proposed transition diagrams.

 

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