Method for Evaluating the Quality of an Epitaxial Overgrowth Layer of Silicon on a Single‐Crystal Silicon Seed
作者:
D. M. Jackson,
J. B. Newkirk,
M. J. Urban,
期刊:
Journal of Applied Physics
(AIP Available online 1962)
卷期:
Volume 33,
issue 7
页码: 2301-2304
ISSN:0021-8979
年代: 1962
DOI:10.1063/1.1728949
出版商: AIP
数据来源: AIP
摘要:
Glancing angle x‐ray diffraction photographs are used in the evaluation of the quality of epitaxial silicon overgrowths. Comparisons are made between the results obtained from high quality growth and highly polycrystalline and slightly nonepitaxial structures. The method is a reliable technique for detecting the presence of randomly oriented silicon in amounts exceeding the equivalent of 5 &mgr; in thickness.
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