PbTiO3thin films on Si substrate were prepared by plasma enhanced chemical vapor deposition (PECVD) using Ti(O-i-C3H7)4, Pb(C2H5)4and oxygen. The composition of PECVD PbTiO3thin films was intensively influenced by the input flow rate ratio of precursors, while it was independent of the deposition temperatures. As-deposited PECVD PbTiO3thin film showed a uniform distribution of the Pb, Ti and C component throughout the bulk of film. The PECVD PbTiO3thin films after annealing at 650°C under O2ambient for 1 hr were converted from the amorphous phase to the crystalline perovskite phase. The phase transition between the tetragonal and the cubic phase occurred at about 500°C. The properties of thin films such as morphology, structure, dielectric constant, leakage current and P-E hysteresis-were also investigated.