Broad‐area semiconductor lasers with gain‐length variation for lateral mode control: The bow‐tie geometry laser
作者:
S. K. Sheem,
B. A. Vojak,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 63,
issue 1
页码: 248-250
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.340453
出版商: AIP
数据来源: AIP
摘要:
A novel idea is proposed to control the spatial mode profile of broad‐area semiconductor lasers in which the cumulative optical gain in the direction of light propagation is tailored by varying the effective length of the contact electrode across the lateral direction. Special interest is on a structure with the highest gain near the center of the device so as to favor the lower‐order lateral modes of oscillation. Preliminary experiments indicate that the concept works as intended.
点击下载:
PDF
(377KB)
返 回