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Scaling laws for diamond chemical‐vapor deposition. II. Atomic hydrogen transport

 

作者: D. G. Goodwin,  

 

期刊: Journal of Applied Physics  (AIP Available online 1993)
卷期: Volume 74, issue 11  

页码: 6895-6906

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.355064

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Scaling relations are developed to allow estimation of the atomic hydrogen concentration at the substrate during diamond chemical‐vapor deposition for both diffusion‐dominated and convection‐dominated reactors. In the convection‐dominated case, it is shown that there exists an optimal Mach number which maximizes the H concentration delivered to the substrate. In addition, when homogeneous recombination is taken into account, there exists an optimal operating pressure. This analysis shows that a sonic flow of highly dissociated hydrogen at a pressure near atmospheric is optimal for rapid growth of high‐quality diamond.

 

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