Modulation‐doped multiquantum wells in InP/In0.53Ga0.47As grown by atmospheric pressure metalorganic chemical vapor deposition
作者:
L. L. Taylor,
M. J. Kane,
S. J. Bass,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 3
页码: 180-182
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98915
出版商: AIP
数据来源: AIP
摘要:
Here we present the first report of electrical transport measurements (Hall effect and Shubnikov de Haas) on modulation‐doped InP/In0.53Ga0.47As multiquantum wells grown by atmospheric pressure metalorganic chemical vapor deposition. Measurements were made on samples containing from 4 to 50 doped quantum wells. The carrier density per well was observed to be constant, approximately 1×1012cm−2independent of the number of wells, with 4 K mobilities from 70 000 to 90 000 cm2 V−1 s−1. Very little persistent photoconductivity was observed in any of the multiple quantum well structures.
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