首页   按字顺浏览 期刊浏览 卷期浏览 Electron Energy Levels in GaAs/Ga1–xAlxAs Heterojunctions II. Optical Properties
Electron Energy Levels in GaAs/Ga1–xAlxAs Heterojunctions II. Optical Properties

 

作者: V. E. Godwin,   M. Tomak,  

 

期刊: physica status solidi (b)  （WILEY Available online 1986）
卷期: Volume 137, issue 2  

页码: 619-622

 

ISSN:0370-1972

 

年代: 1986

 

DOI:10.1002/pssb.2221370223

 

出版商: WILEY‐VCH Verlag

 

数据来源: WILEY

 

摘要:

AbstractThe oscillator strength for electric‐dipole transitions and the photoionization cross‐section of impurities in GaAs/Ga1–xAlxAs heterojunctions are calcu

 

点击下载:  PDF (210KB)



返 回