Spatial distribution of defects produced by boron ion implantation of silicon
作者:
V.V. Yudin,
V.I. Kurinny,
Yu.S. Akimov,
A.P. Karatsyuba,
期刊:
Radiation Effects
(Taylor Available online 1975)
卷期:
Volume 24,
issue 1
页码: 59-61
ISSN:0033-7579
年代: 1975
DOI:10.1080/00337577508239478
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
A simple technique for the study of the spatial distribution of the damage produced by ion implantation of silicon has been developed. The damage depth distribution for 40 keV boron ions in silicon has been studied at irradiation doses from 7 × 1011to 3.9 × 1014ions/cm2and the relative defect peak depthRd/Rp= 0.85 determined. An increase of layer conductivity as the surface part of the implanted layer is removed has been revealed. This effect is caused by the presence of radiation defects in the surface region of the layer. The “electrical” cluster diameter is about 28 A and the overlapping cluster dose is close to 1 × 1013ions/cm2.
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