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Carrier concentration, mobility, resistivity and impurity concentration of 400 keV channeled phosphorus ions in silicon

 

作者: A. Johansen,   J.S. Olsen,   L. Sarholt-kristensen,   F.W. Martin,  

 

期刊: Radiation Effects  （Taylor Available online 1970）
卷期: Volume 3, issue 1  

页码: 65-72

 

ISSN:0033-7579

 

年代: 1970

 

DOI:10.1080/00337577008235618

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

High resistivity single crystals ofp-type silicon have been implanted at room temperature in the (110) direction with 400 keV P-31 and P-32 ions, using total doses of 1013and 1015ions/cm2.

 

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