Sputter‐induced grain boundary junctions in YBa2Cu3O7−xthin films on MgO
作者:
B. V. Vuchic,
K. L. Merkle,
K. A. Dean,
D. B. Buchholz,
R. P. H. Chang,
L. D. Marks,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 6
页码: 2591-2594
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.358721
出版商: AIP
数据来源: AIP
摘要:
A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa2Cu3O7−xthin films on MgO. The YBa2Cu3O7−xthin film grown on a pre‐sputtered region of MgO was rotated 45° about the [001] axis relative to the YBa2Cu3O7−xthin film grown on an adjacent unsputtered region of the substrate. YBa2Cu3O7−xthin films were grown using pulsed organometallic beam epitaxy (POMBE). The current‐voltage and resistance‐temperature characteristics of individual grain boundary junctions demonstrated weak‐link‐type behavior. Sputter‐induced 45° grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations. ©1995 American Institute of Physics.
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