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Characteristics of δ ‐doped InGaAs/GaAs pseudomorphic double‐quantum‐well high electron mobility transistors

 

作者: R. T. Hsu,   M. J. Kao,   J. S. Wang,   W. C. Hsu,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1995）
卷期: Volume 13, issue 2  

页码: 273-275

 

ISSN:1071-1023

 

年代: 1995

 

DOI:10.1116/1.588363

 

出版商: American Vacuum Society

 

关键词: QUANTUM WELLS;JUNCTION TRANSISTORS;DOPED MATERIALS;TERNARY COMPOUNDS;INDIUM ARSENIDES;GALLIUM ARSENIDES;SILICON ADDITIONS;CVD;ELECTRICAL PROPERTIES;(In,Ga)As;GaAs:Si

 

数据来源: AIP

 

摘要:

δ‐doped InGaAs/GaAs pseudomorphic double‐quantum‐well high electron mobility transistors grown by low pressure metalorganic chemical vapor deposition are fabricated and demonstrated. The heterostructure with 2 μm gate length and 100 Å channel spacer thickness shows a peak extrinsic transconductance and a maximum saturation current density of 121 mS/mm and 423 mA/mm at 300 K, respectively. Meanwhile, an interesting broad twin‐peak transconductance plateau (∼4 V) is observed.

 

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