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Study on oxygen behavior during Ti/Si and Ti/SiO2interactions

 

作者: Bing‐Zong Li,   Shi‐Fang Zhou,   Feng Hong,   Guo‐Bao Jiang,   Ping Liu,   Ai‐Ming Zhang,   Ming Chao,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 6  

页码: 1714-1720

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584166

 

出版商: American Vacuum Society

 

关键词: TITANIUM;SILICON;SILICA;VLSI;INTERFACE PHENOMENA;OXYGEN;DIFFUSION;FILM GROWTH;THIN FILMS;TITANIUM OXIDES;ATOM TRANSPORT;Ti;Si;SiO2;TiSi2

 

数据来源: AIP

 

摘要:

For practical titanium silicide device application the oxygen behavior in the solid phase interaction is important to study. The Ti/Si and Ti/SiO2interaction by the NH3plasma assisted thermal annealing and oxidation of Ti/SiO2and TiSi2/Si in a wet oxygen ambient were investigated by Auger electron analysis. The characteristic Auger spectral line shapes of Ti, O, and Si and their changes in compounds were measured. The experiment clearly demonstrated the oxygen snowplow effect during TiSi2and TiN growth, and a stable SiO2can be grown on TiSi2/Si directly or through a layer of TiO2.

 

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