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Selenium‐DXcenter‐doped AlxGa1−xAs grown by molecular beam epitaxy

 

作者: P. Basmaji,  

 

期刊: Journal of Applied Physics  （AIP Available online 1991）
卷期: Volume 70, issue 5  

页码: 2866-2867

 

ISSN:0021-8979

 

年代: 1991

 

DOI:10.1063/1.349350

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The electrical transport properties of epitaxial Se‐Al0.1Ga0.9As grown by molecular beam epitaxy were studied. The carrier concentration was deduced from the Shubnikov–de Haas oscillations. At low temperature, persistent photoconductivity was not observed.

 

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