Two deep electron traps induced by lattice mismatch in relaxed GaAs1−xSbxlayers (x=0% to 3%) grown by liquid phase epitaxy (LPE) on GaAs substrates have been revealed by means of deep‐level transient spectroscopy. One of the traps, that shows nonstandard, logarithmic capture kinetics and whose energy level is tied to the valence‐band edge, has been related to electron states associated with &agr; dislocations. The other trap has been attributed to the EL2 defect and possible reasons of its unexpected formation in the LPE‐grown layers are briefly discussed. ©1995 American Institute of Physics.