Deposition of single phase, homogeneous silicon oxynitride by remote plasma‐enhanced chemical vapor deposition, and electrical evaluation in metal–insulator–semiconductor devices
作者:
Y. Ma,
G. Lucovsky,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 4
页码: 2504-2510
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587792
出版商: American Vacuum Society
关键词: SILICON COMPOUNDS;TERNARY COMPOUNDS;OXYNITRIDES;CVD;ANNEALING;MIS TRANSISTORS;CV CHARACTERISTIC;INTERFACE STATES;CHEMICAL COMPOSITION;CHEMICAL BONDS;AES;INFRARED SPECTRA;Si(O,N);Si
数据来源: AIP
摘要:
Device‐quality thin silicon oxynitride films were successfully prepared by combining remote plasma‐enhanced chemical‐vapor deposition and rapid thermal annealing techniques. The physical, chemical, and electrical properties of the films are determined by the relative flow rates of the N‐atom and O‐atom source gases, NH3and N2O, respectively. Analysis of metal–insulator–semiconductor devices indicated the fixed charges in the dielectric (Qf) and the interface defect state densities (Dit), as determined from the analysis of conventional capacitance–voltage (C–V) measurements, were significantly reduced following post‐deposition rapid thermal annealing. The approximate compositions of the films were obtained by on‐line Auger electron spectroscopy, and the local bonding arrangements were determined by Fourier transform infrared spectroscopy. Correlations between the local bonding structures in the oxynitride films and the electrically active defective states at the Si–SiOyNzinterface are also discussed.
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