A review is made of recent literature dealing with radiation‐induced point defects distributed volumetrically in thermally grown SiO2‐on‐Si or superficially at the silicon interface, with particular emphasis on the results of electron‐spin‐resonance experimentation. The observed defect types and their anneal kinetics are then compared with recent advances in the understanding of similar species and processes in irradiated bulk fused silica. It is concluded that radiolytic molecular hydrogen is formed in thermally grown SiO2layers, just as it is in bulk fused silica, and that the diffusion of this hydrogen determines the temperature and time dependencies of the post‐irradiation interface state buildups.