Influence of the image force on the band gap in semiconductors and insulators
作者:
M. Kleefstra,
G. C. Herman,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 9
页码: 4923-4926
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.328366
出版商: AIP
数据来源: AIP
摘要:
The change in potential energy of electrons and holes and the resulting band‐gap change caused by the image force have been calculated close to the insulator‐semiconductor interface. Some examples are given from which it appears that in metal‐insulator‐semiconductor (MIS) structures, as in Schottky diodes, the effects of the image force should not be overlooked.
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