The selective optical compensation effect in which exclusively acceptor‐associated emissionsgand [g‐g] are selectively quenched by the simultaneous presence of acceptor and donor atoms, was investigated in dually Zn+(acceptor)‐implanted and Se+(donor)‐implanted GaAs as a function of Se to Zn concentration ratio, [Se]/[Zn], at a fixed Zn concentration of 1×1017cm−3. It was revealed for the first time that Se atoms with one‐tenth of the concentration of Zn have the ability to significantly suppress the [g‐g] emission. However, thegemission is not significantly suppressed by the presence of even an equal concentration of Se atoms.