We present results which may resolve the recently reported discrepancy between the experimental and the calculated electric fields in the depletion region of undoped GaAs. The photoreflectance theory reportedly underestimates the electric field by nearly a factor of 2. We have found that changes in photoreflectance with laser pump penetration reveal the full character of the electric field over the entire depletion zone. It is often assumed that the built‐in surface potential produces a uniform electric field throughout a thin (100 nm) undoped layer of GaAs grown on top of a heavily doped energy pinning underlayer. Instead, it appears that the heavily doped underlayer provides a potential step at the interface. The step is separated from the surface depletion zone by a region of low electric field which is characteristic of the low fields found in thick, undoped GaAs with (2–4)×1014/cm3of unintentional impurities.