The emission of electrons from a reverse‐biassedp‐nlocated below and parallel to ann‐type emitting surface has been investigated experimentally. By sputter thinning thenlayer, followed by annealing and CS‐O treatments all in vacuum, we have been able to measure the energy distributions of emitted electrons at several differentn‐layer thicknesses, allowing direct application of a theoretical treatment due to Baraff. The surface barrier of ∼1.1 eV enables us to sample electrons having an average energy of about 3.0 eV above the conduction‐band minimum. At these energies, considerably below those studied by most others, we find the mean free path for optical phonon emission,Lp, to be 141 A˚, for ionization,Li, to be 8526 A˚, and the total attenuation length,Lo, to be 359 A˚.