Thermally stable InGaP/GaAs Schottky contacts using low N content double layer WSiN
作者:
Kenji Shiojima,
Kazumi Nishimura,
Masami Tokumitsu,
Takumi Nittono,
Hirohiko Sugawara,
Fumiaki Hyuga,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 6
页码: 3543-3549
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.588794
出版商: American Vacuum Society
关键词: (In,Ga)P;GaAs;(W,Si,N)
数据来源: AIP
摘要:
This article describes thermally stable Schottky contacts using low N content double layered WSiN for InGaP/(In)GaAs metal–semiconductor field‐effect transistors with self‐aligned ion‐implantedn+layers. Transmission electron microscopy observations show that the microscopic interfacial reaction between WSiN and GaAs is completely suppressed when N content in the WSiN is 10% or less. As a result, a WSiN/GaAs‐cap/InGaP Schottky contact shows high thermal stability after annealing at 800 °C for 100 min, even though the GaAs cap is as thin as 25 Å. Moreover, the double‐layer WSiN structure suppresses reduction in the carrier concentration in the channel during activation annealing. The carrier concentration of the GaAs‐cap (40 Å)/InGaP (100 Å)/ InGaAs‐channel (100 Å) film, 6.5×1018cm−3, decreases to less then 2×1018cm−3with low N content WSiN (N=10%, 4000 Å) after annealing at 900 °C for 0.1 s, but it remains 3.8×1018cm−3with the double layered WSiN (N=37%, 3800 Å/N=10%, 200 Å).
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