Influence of the As overpressure during the molecular beam epitaxy growth of Si‐doped (211)A and (311)A GaAs
作者:
L. Pavesi,
M. Henini,
D. Johnston,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 21
页码: 2846-2848
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113449
出版商: AIP
数据来源: AIP
摘要:
Si‐doped (211)A and (311)A GaAs samples grown by molecular beam epitaxy (MBE) with various growth As pressures have been studied. Hall effect measurements have revealed that the doping changes fromptontype by increasing the As pressure. The transition As pressure is lower for the (211)A than for the (311)A surfaces. Photoluminescence measurements have shown that by increasing the As pressure, arsenic vacancy defects are changed into pairs of Ga vacancy and Ga antisite defects. These results are explained by considering the orientation dependence of the surface bonding and the kinetics of the MBE growth process. ©1995 American Institute of Physics.
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