Direct measurement of ballistic electron distribution and relaxation length in InP-based heterojunction bipolar transistors using electroluminescence spectroscopy
作者:
R. Teissier,
J.-L. Pelouard,
F. Mollot,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 21
页码: 2730-2732
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121682
出版商: AIP
数据来源: AIP
摘要:
The electroluminescence signal emitted from operating InP-based heterojunction bipolar transistors (HBT) is analyzed, giving clear evidence of ballistic electron transport through the base. The luminescence signal is studied as a function of base thickness, providing direct access to the ballistic electron mean free path. This continuous wave technique proves to be very efficient to measure ballistic electron scattering rates: 30 fs at 77 K and 19 fs at 300 K for a base Be doped to1019 cm−3.Quasiballistic transport range is found to be comparable to base width accessible by state of the art device technology, demonstrating its importance for ultrafast HBT operation. ©1998 American Institute of Physics.
点击下载:
PDF
(83KB)
返 回