Lateral impurity transport in silicon films on insulators during laser recrystallization
作者:
K. Sugahara,
T. Nishimura,
Y. Akasaka,
H. Nakata,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 5
页码: 356-358
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96550
出版商: AIP
数据来源: AIP
摘要:
The lateral transport of dopants in silicon films on insulators during laser recrystallization is investigated. The dopants implanted locally in silicon films on insulators are found to be transported in the forward direction of the laser scan as well as the backward direction. Both transport lengths from the originally implanted region are measured as a function of the laser scan velocity. The transport mechanism is explained by taking into account a liquid phase diffusion and a segregation of impurities depending on the crystallization speed. The diffusion coefficients of (1.2±0.2)×10−4and (1.3±0.4)×10−4cm2/s for arsenic and boron, respectively, in molten silicon are obtained.
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