Model for semiconductor laser structures incorporating longitudinal and transverse variations
作者:
K.A.Shore,
期刊:
IEE Proceedings J (Optoelectronics)
(IET Available online 1985)
卷期:
Volume 132,
issue 1
页码: 52-57
年代: 1985
DOI:10.1049/ip-j.1985.0011
出版商: IEE
数据来源: IET
摘要:
A description is given of a computer model for the analysis of semiconductor lasers in which longitudinal variations in such devices are taken into account. The construction of the model ensures that a detailed description of the transverse variations in the device is also maintained, and, furthermore, that a variety of cross-sectional geometries may be examined. Numerical results are presented to illustrate longitudinal variations occurring in the device due to asymmetries in facet reflectivities.
点击下载:
PDF
(819KB)
返 回