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New mechanism for Si incorporation in GaAs‐on‐Si heteroepitaxial layers grown by metalorganic chemical vapor deposition

 

作者: S. Nozaki,   J. J. Murray,   A. T. Wu,   T. George,   E. R. Weber,   M. Umeno,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 55, issue 16  

页码: 1674-1676

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.102232

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new mechanism is proposed for Si incorporation in GaAs‐on‐Si heteroepitaxial layers grown by metalorganic chemical vapor deposition. This mechanism involves gas phase transport of the Si to the heteroepitaxial layers during growth. This mode of Si uptake could operate in addition to the previously proposed mechanism of Si incorporation by enhanced diffusion from the heterointerface through defects in the GaAs layer.

 

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