Study of temperature dependent structural changes in molecular‐beam epitaxy grown Hg1−xCdxTe by x‐ray lattice parameter measurements and extended x‐ray absorption fine structure
作者:
D. Di Marzio,
M. B. Lee,
J. DeCarlo,
A. Gibaud,
S. M. Heald,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1991)
卷期:
Volume 9,
issue 3
页码: 1886-1891
ISSN:1071-1023
年代: 1991
DOI:10.1116/1.585376
出版商: American Vacuum Society
关键词: MERCURY TELLURIDES;CADMIUM TELLURIDES;MOLECULAR BEAM EPITAXY;TEMPERATURE DEPENDENCE;CRYSTAL STRUCTURE;X−RAY DIFFRACTION;BNL;LATTICE PARAMETERS;PHOTODETECTORS;EXAFS
数据来源: AIP
摘要:
Infrared detectors fabricated from Hg1−xCdxTe typically operate in the 60 to 160 K range. The temperature dependence of the atomic structure of HgCdTe may influence device performance. We present the first detailed study of the x‐ray diffraction lattice parameters of molecular‐beam epitaxy grown Hg1−xCdxTe epilayers between 15 and 300 K. The epilayers were grown on (100) oriented CdTe substrates, and varied in thickness (6 to 11‐μm) and composition (x=0–0.172). The (400) reflection was measured to determine the lattice parametera⊥ normal to the film. HgTe (x=0) exhibited normal lattice contraction (α=4.7×10−6±0.3 K−1at 300 K), with a minimum ina⊥ at 60 K, and an expansion ofa⊥ below 60 K. In addition to showing a minimum ina⊥ at 60 K, some of the Hg1−xCdxTe (x≠0) epilayers (10 μm thick) exhibited anomalous behavior with varying degrees of thermal hysteresis ina⊥. The average contraction ofa⊥ for these epilayers from 300 to 60 K is 0.006 Å. This is compared with results we have obtained from a temperature dependent extended x‐ray absorption fine structure study of these HgCdTe epilayers: whereas HgTe exhibited a normal thermal contraction of the Hg–Te bond length consistent with the lattice parameter results, in the HgCdTe epilayers this bond contracts 0.02 to 0.03 Å on cooling from 300 to 10 K. We also present lattice parameter measurements for a thin cap layer of CdTe on HgCdTe. An increase of 0.0134 Å ina⊥ relative to the bulk was observed for a 1000 Å layer of CdTe on HgCdTe at 300 K.
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