Cobalt dopedBaTiO3thin films have been fabricated using two-target pulsed laser ablation within situlaser annealing. KrF laser ablated simultaneously bothBaTiO3andCo3O4sintered targets and the cobalt concentration could simply be controlled at the concentration range of 0.08&percent;–5&percent; by adjusting laser fluences, off-axis deposition angles, and laser-irradiated area for Co ablation. AllCo:BaTiO3films were epitaxially grown on MgO(100) substrate. Optical absorption coefficients were measured at visible region of the spectrum with increasing Co dopant concentrations. ©1997 American Institute of Physics.