Gas evolution from hydrogenated amorphous carbon films
作者:
X. Jiang,
W. Beyer,
K. Reichelt,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 3
页码: 1378-1380
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346690
出版商: AIP
数据来源: AIP
摘要:
Gas evolution experiments have been performed on hydrogenated amorphous carbon (a‐C:H) films prepared by plasma deposition. Two series of films are studied: in series I, C2H2is used as a process gas at a fixed bias voltage while the gas pressure is varied, and in series II, CH4is employed at a fixed gas pressure, and the bias voltage is changed. The results are compared to infrared absorption data and density measurements and support the presence of a void network in the amorphous material, the extent of the void network depending on the deposition conditions.
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