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Determination of the intersubband lifetime in Si/SiGe quantum wells

 

作者: W. Heiss,   E. Gornik,   H. Hertle,   B. Murdin,   G. M. H. Knippels,   C. J. G. M. Langerak,   F. Scha¨ffler,   C. R. Pidgeon,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 66, issue 24  

页码: 3313-3315

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.113741

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A direct pump and probe lifetime determination in the ps regime has been made in quantum wells of Si/Si1−xGex. We have used an rf linac‐pumped free‐electron laser to determine the relaxation time associated with intersubband absorption in Si/SiGe quantum wells with a subband separation smaller than the optical phonon energy. This measurement yields a lifetime ofT1=30 ps. ©1995 American Institute of Physics.

 

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