The dependence of excess carrier lifetimes on the photoinjected carrier densities has been investigated for Cr‐doped GaAs at 300 and 80°K, using photomagnetoelectric (PME) and photoconductive (PC) methods. The result shows three distinct injection ranges covering five orders of magnitude change in photoconductance. The lifetimes are constant at low and high injection ranges while showing injection dependence at intermediate injection range. A theory is given to explain the observed results.