Interfacial structure and its effect on nucleation and growth energetics in mesotaxial Si/CoSi2/Si structures
作者:
R. Hull,
Y. F. Hsieh,
A. E. White,
K. T. Short,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 26
页码: 3467-3469
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105655
出版商: AIP
数据来源: AIP
摘要:
We show how analysis of the stacking sequences at CoSi2/Si interfaces formed by 100 kV Co+implantation into Si (001) or (111) predicts the formation of partial dislocations or stacking faults at precipitate corners. The presence and nature of the stacking fault can uniquely identify the bonding coordination at the CoSi2/Si(111) interface. Consideration of the interfacial structure for twinned (B) and untwinned (A) {111} interfaces helps explain the competitive nucleation and growth ofAvsBprecipitates.
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