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Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bonds

 

作者: C. J. Sandroff,   M. S. Hegde,   L. A. Farrow,   C. C. Chang,   J. P. Harbison,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 54, issue 4  

页码: 362-364

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101451

 

出版商: AIP

 

数据来源: AIP

 

摘要:

X‐ray photoelectron spectroscopy reveals that the remarkable electronic quality of GaAs/sulfide interfaces can be ascribed to the formation of AsxSyphases which grow on an oxide‐free GaAs surface. While one of these phases is akin to As2S3, another shows significant in‐plane S—S bonding. Raman experiments indicate that the band bending on this disulfide‐ terminated surface has been reduced to 0.12 eV.

 

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