Transferred‐electron induced current instabilities in heterojunction bipolar transistors
作者:
V. A. Posse,
B. Jalali,
A. F. J. Levi,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 24
页码: 3319-3321
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113743
出版商: AIP
数据来源: AIP
摘要:
Current driven instabilities in the collector of III–V heterojunction bipolar transistors (HBT) are investigated. Numerical simulations indicate that in a modified AlGaAs/GaAs HBT the collector current shows oscillatory behavior due to the transferred‐electron (Gunn–Hilsum) effect. Influence of the Kirk effect as well as conditions for oscillation are discussed. ©1995 American Institute of Physics.
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