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Well‐width dependence of the excitonic lifetime in strained III‐V quantum wells

 

作者: Th. Amand,   X. Marie,   B. Dareys,   J. Barrau,   M. Brousseau,   D. J. Dunstan,   J. Y. Emery,   L. Goldstein,  

 

期刊: Journal of Applied Physics  （AIP Available online 1992）
卷期: Volume 72, issue 5  

页码: 2077-2079

 

ISSN:0021-8979

 

年代: 1992

 

DOI:10.1063/1.351642

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The dependence of the excitonic lifetime on the well width in InGaAs/InP (unstrained), InGaAs/GaAs, and InGaAsP/InP strained quantum well heterostructures is investigated by time‐resolved photoluminescence spectroscopy. We show that the main contribution to the lifetime variation comes from the change of the exciton binding energy. In the strained InGaAs/GaAs wells, the widest wells have a shorter lifetime than expected. We attribute this to the onset of plastic relaxation.

 

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