Characterization, Control, and Use of Dielectric Charge Effects in Silicon Technology
作者:
J. R. Szedon,
R. M. Handy,
期刊:
Journal of Vacuum Science and Technology
(AIP Available online 1969)
卷期:
Volume 6,
issue 1
页码: 1-12
ISSN:0022-5355
年代: 1969
DOI:10.1116/1.1492613
出版商: American Vacuum Society
数据来源: AIP
摘要:
The charge behavior of dielectric films on silicon is particularly important in device and integrated circuit technology because of surface effects. Models for ionic migration, fixed-interface charge, and injection trapping are reviewed for insulators used in silicon technology: thermally-grown silicon dioxide and chemical vapor-deposited silicon dioxide and silicon nitride. The distinctive characteristics of insulator charge related to these mechanisms are applied in the case of reactively sputteredSiO2andTa2O5. Ion migration and injection-trapping behavior are found under certain conditions of preparation for both materials. A degree of interface charge control is indicated in the study of sputtered silicon dioxide. More work is needed to establish the future utility of these materials.
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