Carrier mobility in polycrystalline semiconductors
作者:
K. Ram Kumar,
M. Satyam,
期刊:
Applied Physics Letters
(AIP Available online 1981)
卷期:
Volume 39,
issue 11
页码: 898-900
ISSN:0003-6951
年代: 1981
DOI:10.1063/1.92599
出版商: AIP
数据来源: AIP
摘要:
This letter presents a modified version of the grain boundary barrier model for polycrystalline semiconductors which takes into account the carrier transport in the bulk of the grain and the dynamic process of capture and release of free carriers by the grain boundary traps.
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