Plasma‐enhanced chemical vapor deposition of &bgr;‐tungsten, a metastable phase
作者:
C. C. Tang,
D. W. Hess,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 6
页码: 633-635
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.95337
出版商: AIP
数据来源: AIP
摘要:
Plasma‐enhanced chemical vapor deposition of a metastable phase of tungsten ( &bgr;‐W) is performed using tungsten hexafluoride and hydrogen as source gases. At 350 °C, the as‐deposited resistivity of these films is ∼50 &mgr;&OHgr; cm. After heat treatments between 650 and 750 °C in forming gas, the resistivity drops below 11 &mgr;&OHgr; cm. Concomitant with this resistivity change is a phase change to &agr;‐W, the equilibrium, body‐centered‐cubic form.
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