We propose a tunable electronic Raman‐scattering process which yields tuning of the scattered frequency over ≳10 cm−1in the far infrared. For a specific example of donor levels in GaAs and an incident photon frequency of ∼66.2 cm−1(151 &mgr;m), a magnetic field of 10–30 kG yields Raman‐scattering cross sections of 10−24–10−23cm2 sr−1. We show that a tunable Raman laser covering a frequency region from ∼30.7 to ∼16.0 cm−1(i.e., from ∼325 to ∼625 &mgr;m) is feasible.