Charge Multiplication in GaPp‐nJunctions
作者:
R. A. Logan,
A. G. Chynoweth,
期刊:
Journal of Applied Physics
(AIP Available online 1962)
卷期:
Volume 33,
issue 5
页码: 1649-1654
ISSN:0021-8979
年代: 1962
DOI:10.1063/1.1728804
出版商: AIP
数据来源: AIP
摘要:
Charge multiplication arising from carriers injected intop‐njunctions in gallium phosphide has been studied as a function of applied bias. From these and capacitance studies, the carrier ionization rate as a function of field has been determined. It is found to be very similar, both qualitatively and quantitatively, to the behavior in silicon. In particular, the mean free path for hot carriers between collisions involving optical phonon emission is of the order of 100 A. An additional result obtained from simple analysis of the photoresponse and capacitance behavior of the junctions is that the dominant carrier lifetime is 10−10sec.
点击下载:
PDF
(451KB)
返 回