Microstructure and deposition rate of aluminum thin films from chemical vapor deposition with dimethylethylamine alane
作者:
Byoung‐Youp Kim,
Xiaodong Li,
Shi‐Woo Rhee,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 68,
issue 25
页码: 3567-3569
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.116639
出版商: AIP
数据来源: AIP
摘要:
Deposition of aluminum film from DMEAA in the temperature range of 100–300 °C has been studied. In this temperature range, there is a maximum deposition rate at around 150 °C. The film deposited at 190 °C has elongated blocklike grain shapes, which are ∼600 nm in width and 930 nm in length. Grains in the film deposited at 150 °C showed an equiaxed structure with grain size in the range of 100–300 nm in a film with 600 nm thickness. Aluminum oxide particle inclusion was observed especially at high deposition temperature. Plausible reaction pathways of DMEAA dissociation were suggested to explain the experimental observations. ©1996 American Institute of Physics.
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