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Microstructure and deposition rate of aluminum thin films from chemical vapor deposition with dimethylethylamine alane

 

作者: Byoung‐Youp Kim,   Xiaodong Li,   Shi‐Woo Rhee,  

 

期刊: Applied Physics Letters  (AIP Available online 1996)
卷期: Volume 68, issue 25  

页码: 3567-3569

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.116639

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Deposition of aluminum film from DMEAA in the temperature range of 100–300 °C has been studied. In this temperature range, there is a maximum deposition rate at around 150 °C. The film deposited at 190 °C has elongated blocklike grain shapes, which are ∼600 nm in width and 930 nm in length. Grains in the film deposited at 150 °C showed an equiaxed structure with grain size in the range of 100–300 nm in a film with 600 nm thickness. Aluminum oxide particle inclusion was observed especially at high deposition temperature. Plausible reaction pathways of DMEAA dissociation were suggested to explain the experimental observations. ©1996 American Institute of Physics.

 

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