Molecular‐beam epitaxy has been successfully used to grow InAsxSb1−xon InP substrates with good electrical characteristics. The samples are allntype with electron concentrations varying in the range (3–9)×1015cm−3. The mobilities are high (70 000 and 110 000 cm2/V s at 300 and 77 K, respectively) in InSb and the alloys. More importantly, the mobilities remain high at the low temperatures in the alloys also, without any type conversion. The mobility data have been analyzed taking into account the appropriate scattering mechanisms. The alloy scattering potential in InAs0.24Sb0.76is estimated to be 0.3 V.