Multilayer films composed of piezoelectrically active ZnO and inactiveAl2O3layers were prepared on silicon by a pulsed laser deposition technique. The ZnO layers were completely (001) textured to generate a single piezoelectric coefficientd33perpendicular to the substrate surface and theAl2O3layers were amorphous at 375 °C. The interfacial sharpness and the film orientation were analyzed by low and high angle x-ray diffraction &thgr;–2&thgr; scanning. High frequency resonance of 10.6 GHz was measured and higher values up to 100 GHz are expected in the multilayer films with periods 320 nm or smaller. ©1997 American Institute of Physics.