Semiconductor topography in aqueous environments: Tunneling microscopy of chemomechanically polished (001) GaAs
作者:
Richard Sonnenfeld,
J. Schneir,
B. Drake,
P. K. Hansma,
D. E. Aspnes,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 24
页码: 1742-1744
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97734
出版商: AIP
数据来源: AIP
摘要:
Scanning tunneling microscopy (STM) of (001) GaAs samples immersed in aqueous solutions has been used to assess the effectiveness of a standard bromine‐methanol chemomechanical polish to produce flat surfaces over length scales from 5 to 1000 nm. The STM images reveal irregular 100‐nm features coexisting with large areas of average roughness of the order of a few nanometers. The precision, stability, and reproducibility of these images suggest that immersion STM could be used to study surface chemical processes in real time.
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