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Semiconductor topography in aqueous environments: Tunneling microscopy of chemomechanically polished (001) GaAs

 

作者: Richard Sonnenfeld,   J. Schneir,   B. Drake,   P. K. Hansma,   D. E. Aspnes,  

 

期刊: Applied Physics Letters  (AIP Available online 1987)
卷期: Volume 50, issue 24  

页码: 1742-1744

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.97734

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Scanning tunneling microscopy (STM) of (001) GaAs samples immersed in aqueous solutions has been used to assess the effectiveness of a standard bromine‐methanol chemomechanical polish to produce flat surfaces over length scales from 5 to 1000 nm. The STM images reveal irregular 100‐nm features coexisting with large areas of average roughness of the order of a few nanometers. The precision, stability, and reproducibility of these images suggest that immersion STM could be used to study surface chemical processes in real time.

 

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