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Void-free chemically vapor-deposited aluminum dual inlaid metallization schemes for ultra-large-scale-integrated via and interconnect applications

 

作者: T. P. Ong,   R. Fiordalice,   R. Venkatraman,   S. Garcia,   A. Jain,   T. Sparks,   J. Farkas,   M. Fernandes,   M. Gall,   D. Jawarani,   J. Klein,   E. Weitzman,   H. Kawasaki,   Wei Wu,   R. Blumenthal,   F. Pintchovski,   R. Marsh,   P. Zhang,   H. Zhang,   T. Guo,   R. Mosely,  

 

期刊: Applied Physics Letters  （AIP Available online 1998）
卷期: Volume 73, issue 1  

页码: 82-84

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121731

 

出版商: AIP

 

数据来源: AIP

 

摘要:

This letter reports an investigation of two unique dual inlaid metallization approaches with low pressure chemical vapor deposition (LPCVD) of aluminum (Al) for sub-0.35 &mgr;m ultra-large-scale-integration interconnect technology: (1) warm Al/CVD Al/coherent (coh.) PVD Al/coh. PVD Ti and (2) warm PVD Al/CVD Al/coh. PVD Ti or Al/selective CVD Al. The integration of thin coh. PVD Al, deposited with a physical collimator or a variation of ionized metal plasma technique, was found to be the unique and simple solution in providing void-free via and interconnect structures, which have not been reported elsewhere. Excellent electrical and electromigration results have been obtained. ©1998 American Institute of Physics.

 

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