Ap‐njunction has been formed inn‐type silicon carbide (6H–SiC) by aluminum (Al) doping at room temperature using a pulsed laser doping method. A 6H–SiC substrate in [H2+(CH3)3Al] atmosphere was irradiated by an KrF excimer laser of 20 ns full width at half‐maximum. The depth profile of Al determined by secondary ion mass spectroscopy showed a rectangularlike shape with a maximum concentration of 1×1022Al/cm3. Furthermore, Al atoms were doped to a depth of about 0.05 &mgr;m from the surface. The current–voltage characteristics of thep‐njunction clearly showed the rectifying property with low leakage current. ©1995 American Institute of Physics.