Atomic layer epitaxy has been employed to fabricate white light emitting ZnS:Pr and SrS:Pr thin film electroluminescent devices. Electrical and optical properties of these devices have been characterized and compared. It is found that SrS:Pr devices are significantly brighter and more efficient than ZnS:Pr devices. The effect of ZnS buffer layers on the electrical characteristics of the SrS electroluminescent devices is discussed. ©1995 American Institute of Physics.