Formation of a stable decagonal quasicrystal in cobalt ion implanted aluminum
作者:
L. F. Chen,
L. M. Wang,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 14
页码: 1825-1827
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118703
出版商: AIP
数据来源: AIP
摘要:
A binary Al–Co decagonal quasicrystal has formed after 100 keVCo+-ion implantation into pure Al with a dose of1.5×1017 ion/cm2,and the quasicrystal has shown a high thermal stability. The composition of stable decagonal quasicrystal is believed to beAl11Co4. Co+ion implantation into Al first produced a multiple layer surface structure. The first layer was an amorphous layer. The second layer consisted of a decagonal quasicrystal and a coexisting amorphous phase. The amorphous phase in the implanted region where composition is close toAl11Co4 was transformed into the decagonal quasicrystal during annealing in a temperature range between 550 and 600 °C. Possible transformation mechanisms for the experimental results are discussed. ©1997 American Institute of Physics.
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