Metallic conductivity of amorphous carbon films under high pressure
作者:
Somnath Bhattacharyya,
S. V. Subramanyam,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 5
页码: 632-634
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120425
出版商: AIP
数据来源: AIP
摘要:
Amorphous carbon films are prepared by plasma-assisted chemical vapor deposition. Resistivity of the films is measured from 300 down to 8 K showing a negative temperature coefficient of resistivity. An increase of room temperature conductivity from102S cm−1to a value of about104S cm−1is found at a pressure of 2 GPa. At a fixed pressure of 0.5 GPa, the films show a positive temperature coefficient of conductivity in the range from 300 to 200 K, followed by a very weak dependence of temperature down to 15 K. At a pressure of 2 GPa a positive temperature coefficient of resistivity is observed in the range between 300 and 15 K. The metallic behavior of the carbon films under high pressure is explained using electronic structure. ©1997 American Institute of Physics.
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